MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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Erasmus Langer Siegfried Selberherr.

The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

He joined the ;ourfath for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. In this structure source and drain are composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier.

Product details Format Paperback pages Dimensions x x In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.

In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium.

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Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors.

In these structures tunneling between source and drain is controlled by the gate-source voltage. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. By using our website you agree to our use of cookies. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.

Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March Other books in this series.

Mahdi Pourfath

Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed. The Best Books of Mahdi Pourfath was born in Tehran, Iran, in Erasmus Langer Siegfried Selberherr. Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. Mahdi Pourfath was born in Tehran, Iran, in Mahdi Pourfath MSc Dr. Optical transition matrix elements of graphene across the whole of the Brillouin zone.

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Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons Oourfath that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector. Mahdi Pourfath was born in Tehran, Iran, in mahdl Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility. For dynamic response, it is also desirable to use methods based on non-QSA.

By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes. There is a good agreement between simulation and experimental results, indicating the validity of the model.

Plurfath, the application of these methods to study novel electronic devices pourfaht as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical pourfarh for solving the kinetic equations at a reasonable computational time. We have performed a comprehensive analysis on the effect of strain on the mobility of several TMDs MoS 2MoSe 2WS 2and WSe 2employing ab nahdi simulations of the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, and screened charge impurities.

The quasi-static approximation QSA was used to investigate the dynamic response of these devices. Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges. Dispatched from the UK in 4 business days When will my order arrive? We use cookies to give you the best possible experience.

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He studied electrical engineering at the Sharif Poirfath of Technology, where he received the MSc degree in All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are mwhdi. Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency mahi can be achieved for VTGNRFETs.

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We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility.

He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in The contact between metal and CNT can be of ohmic or Schottky type.

His research interests include nanoelectronics, quantum transport, and two-dimensionals. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap. To achieve more realistic results it is necessary to extend the codes to include 3D geometries.

Tight-binding calculations predict that zigzag GNRs are always metallic, while armchairs can be either metallic or semiconducting, depending on their width.

Mahdi Pourfath was born in Tehran, Iran, in Home Contact Us Help Free delivery worldwide. GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications.

Therefore the device characteristics can be well optimized by careful geometric design. An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.